Is a
SBIR/STTR Award attributes
SBIR/STTR Award Recipient
Government Agency
Government Branch
Award Type
STTR0
Contract Number (US Government)
W911NF-20-P-00090
Award Phase
Phase I0
Award Amount (USD)
166,5000
Date Awarded
December 20, 2019
0End Date
July 1, 2020
0Abstract
n conjunction with ferromagnetic and antiferromagnetic materials the topological insulators are elements of future magnetic random access memory (MRAM) and GHz-to-THz frequency sources (spin-torque nano-oscillators, STNO). One of the major challenges in applying topological insulators (TIs) in magnetic devices is the mutual incompatible deposition processes. TIs are usually destroyed by the high temperatures needed for growing high quality magnetic insulators. Here we propose to utilize low-temperature (
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