Winchester Technologies, LLC STTR Phase I Award, December 2019

n conjunction with ferromagnetic and antiferromagnetic materials the topological insulators are elements of future magnetic random access memory (MRAM) and GHz-to-THz frequency sources (spin-torque nano-oscillators, STNO). One of the major challenges in applying topological insulators (TIs) in magnetic devices is the mutual incompatible deposition processes. TIs are usually destroyed by the high temperatures needed for growing high quality magnetic insulators. Here we propose to utilize low-temperature (