Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hisashi Ohtani0
Shunpei Yamazaki0
Date of Patent
February 15, 2011
0Patent Application Number
124182800
Date Filed
April 3, 2009
0Patent Primary Examiner
Patent abstract
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.
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