Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shunpei Yamazaki0
Hisashi Ohtani0
Date of Patent
February 1, 2011
Patent Application Number
12418334
Date Filed
April 3, 2009
Patent Primary Examiner
Patent abstract
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
