US Patent 9917180 Trenched and implanted bipolar junction transistor

Patent 9917180 was granted and assigned to United Silicon Carbide, Inc. on March, 2018 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Patent Applicant

United Silicon Carbide, Inc.

Current Assignee

United Silicon Carbide, Inc.

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

9917180

Date of Patent

March 13, 2018

Patent Application Number

15114263

Date Filed

February 10, 2015

Patent Primary Examiner

‌

Kevin M. Picardat

Patent abstract

The present invention concerns a monolithically merged trenched-and-implanted Bipolar Junction Transistor (TI-BJT) with antiparallel diode and a method of manufacturing the same. Trenches are made in a collector, base, emitter stack downto the collector. The base electrode is formed on an implanted base contact region at the bottom surface of the trench. The present invention also provides for products produced by the methods of the present invention and for apparatuses used to perform the methods of the present invention.