Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Marwan H. Khater1
Takashi Ando1
Hiroyuki Miyazoe1
Seyoung Kim1
Date of Patent
February 6, 2018
1Patent Application Number
152822021
Date Filed
September 30, 2016
1Patent Citations Received
Patent Primary Examiner
Patent abstract
A resistive random access memory (RRAM) includes a first electrode, a second electrode, a base oxide provided between the first electrode and the second electrode, and a multivalent oxide provided between the first electrode and the second electrode. The multivalent oxide switches between at least two oxidative states.
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