Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 9, 2018
Patent Application Number
14908863
Date Filed
August 13, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
The present disclosure relates to a MoS2 thin film and a method for manufacturing the same. The present disclosure provides a MoS2 thin film and a method for manufacturing the same using an atomic layer deposition method. In particular, the MoS2 thin film is manufactured by an atomic layer deposition method without using a toxic gas such as H2S as a sulfur precursor. Thus, the present disclosure is eco-friendly. Furthermore, it is possible to prevent the damage and contamination of manufacturing equipment during the manufacturing process. In addition, it is possible to manufacture the MoS2 thin film by precisely controlling the thickness of the MoS2 thin film to the level of an atomic layer.
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