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US Patent 9859380 FinFETs with strained well regions

Overview Structured Data Issues Contributors Activity

Is a

Date Filed

March 6, 2017

Date of Patent

January 2, 2018

Patent Applicant

Taiwan Semiconductor Manufacturing Company

Patent Application Number

15450201

Patent Citations Received

US Patent 12132091 Work function layers for transistor gate electrodes

0

US Patent 12119270 Hybrid source drain regions formed based on same fin and methods forming same

0

US Patent 12119401 Semiconductor device and methods of forming

0

US Patent 12125706 Semiconductor device and method of manufacture

0

US Patent 11670683 Semiconductor device with implant and method of manufacturing same

0

US Patent 11677013 Source/drain epitaxial layers for transistors

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US Patent 11688794 Method for epitaxial growth and device

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US Patent 11688807 Semiconductor device and methods of forming

0

US Patent 11688647 Semiconductor device and method for manufacturing the same

0

US Patent 11682711 Semiconductor device having multi-layered gate spacers

0

•••

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Patent Primary Examiner

Fei Fei Yeung Lopez

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