Log in
Enquire now
‌

US Patent 9859254 Semiconductor structure and a manufacturing method thereof

Patent 9859254 was granted and assigned to Taiwan Semiconductor Manufacturing Company on January, 2018 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors

Contents

Is a
Patent
Patent

Patent attributes

Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9859254
Date of Patent
January 2, 2018
Patent Application Number
15234813
Date Filed
August 11, 2016
Patent Citations Received
‌
US Patent 12136605 Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics and method for forming the same
0
‌
US Patent 12125825 RF devices with enhanced performance and methods of forming the same
0
‌
US Patent 12125784 Interconnect structures
0
‌
US Patent 12129168 Microelectronics package with vertically stacked MEMS device and controller device
0
‌
US Patent 11664241 RF devices with enhanced performance and methods of forming the same
0
‌
US Patent 11664269 RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation
0
‌
US Patent 11676878 Thermally enhanced semiconductor package with at least one heat extractor and process for making the same
0
‌
US Patent 11705362 RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation
0
...
Patent Primary Examiner
‌
Christine Enad
Patent abstract

A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface and a recess extending from the first surface towards the second surface, a first die at least partially disposed within the recess and including a first die substrate and a first bonding member disposed over the first die substrate, a second die disposed over the first die and including a second die substrate and a second bonding member disposed a second die substrate and the second die substrate, a redistribution layer (RDL) disposed over the second die, and a conductive bump disposed over the RDL, wherein the first bonding member is disposed opposite to and is bonded with the second bonding member.

Timeline

No Timeline data yet.

Further Resources

Title
Author
Link
Type
Date
No Further Resources data yet.

References

Find more entities like US Patent 9859254 Semiconductor structure and a manufacturing method thereof

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
Open Query Tool
Access by API
Golden Query Tool
Golden logo

Company

  • Home
  • Press & Media
  • Blog
  • Careers
  • WE'RE HIRING

Products

  • Knowledge Graph
  • Query Tool
  • Data Requests
  • Knowledge Storage
  • API
  • Pricing
  • Enterprise
  • ChatGPT Plugin

Legal

  • Terms of Service
  • Enterprise Terms of Service
  • Privacy Policy

Help

  • Help center
  • API Documentation
  • Contact Us
By using this site, you agree to our Terms of Service.