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US Patent 9812363 FinFET device and method of forming same

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
February 17, 2017
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Date of Patent
November 7, 2017
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Patent Application Number
15436568
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Patent Citations Received
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US Patent 12132091 Work function layers for transistor gate electrodes
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US Patent 12082388 Eight-transistor static random access memory, layout thereof, and method for manufacturing the same
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US Patent 12087616 Air gap formation method
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US Patent 12094779 FinFETs with epitaxy regions having mixed wavy and non-wavy portions
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US Patent 12107163 Semiconductor device structure having dislocation stress memorization and methods of forming the same
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US Patent 12112986 FinFET device and method
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US Patent 12119270 Hybrid source drain regions formed based on same fin and methods forming same
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US Patent 12119401 Semiconductor device and methods of forming
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US Patent 12125706 Semiconductor device and method of manufacture
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US Patent 11670683 Semiconductor device with implant and method of manufacturing same
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•••
Patent Inventor Names
Yi-Wei Chiu
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Ying Ting Hsia
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Chih-Shan Chen
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Chih-Teng Liao
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Tzu-Chan Weng
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
9812363
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Patent Primary Examiner
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George Fourson, III
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