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US Patent 9640273 Mitigating hot electron program disturb
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Patent
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Date Filed
August 25, 2016
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Date of Patent
May 2, 2017
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Patent Application Number
15247746
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Patent Citations Received
US Patent 11769552 Ramp-based biasing and adjusting of access line voltage in a memory device
US Patent 11908506 Memory cell biasing techniques
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Patent Inventor Names
Hong-Yan Chen
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Yingda Dong
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Wei Zhao
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
9640273
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Patent Primary Examiner
Son Mai
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