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US Patent 9608111 Recessed transistors containing ferroelectric material
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Patent
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Date Filed
September 10, 2015
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Date of Patent
March 28, 2017
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Patent Applicant
Micron Technology
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Patent Application Number
14850824
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Patent Citations Received
US Patent 12075625 Memory cell, capacitive memory structure, and methods thereof
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US Patent 11950430 Memory cell, capacitive memory structure, and methods thereof
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Patent Inventor Names
Durai Vishak Nirmal Ramaswamy
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Patent Jurisdiction
United States Patent and Trademark Office
0
Patent Number
9608111
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Patent Primary Examiner
Su C Kim
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