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US Patent 9593422 Substrate processing apparatus and semiconductor device manufacturing method

Patent 9593422 was granted and assigned to Hitachi Kokusai Electric Inc. on March, 2017 by the United States Patent and Trademark Office.

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Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent
1

Patent attributes

Patent Applicant
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Hitachi Kokusai Electric Inc.
1
Current Assignee
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Hitachi Kokusai Electric Inc.
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
95934221
Patent Inventor Names
Koichi Honda1
Masayuki Asai1
Kazuyuki Okuda1
Mamoru Umemoto1
Date of Patent
March 14, 2017
1
Patent Application Number
146676911
Date Filed
March 25, 2015
1
Patent Citations Received
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US Patent 11788190 Liquid vaporizer
Patent Primary Examiner
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Karla Moore
1
Patent abstract

Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a substrate, on a surface of which a metal film or a GST film is formed, such that a first film is formed on the metal film or the GST film by executing at least one cycle of alternately performing (i) supplying a first processing gas, and (ii) supplying a second processing gas that is not activated by plasma excitation; and performing a formation process to the substrate to which the pre-process has been performed such that a second film is formed on the first film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

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