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US Patent 9583350 Memory device and method for fabricating the same

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Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9583350
Date of Patent
February 28, 2017
Patent Application Number
14589006
Date Filed
January 5, 2015
Patent Citations Received
‌
US Patent 11963360 Semiconductor device
3
Patent Primary Examiner
‌
Marc Armand
Patent abstract

A memory device comprises a first conductive stripe, a first memory layer, a first conductive pillar, a first dielectric layer and a first conductive plug. The first conductive strip extends along a first direction. The first memory layer extends along a second direction adjacent to and overlapping with the first conductive stripe to define a first memory area thereon. The first conductive pillar extends along the second direction and overlapping with the first memory area. The first dielectric layer extends along the second direction adjacent to the first conductive stripe, the first memory layer and the first conductive pillar. The first conductive plus extends along the second direction and at least overlaps with a portion of the first conductive stripe, wherein the first conductive plus is electrically insulated from the first conductive stripe, the first memory layer and the first conductive pillar by the first dielectric layer.

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