Patent attributes
A memory device comprises a first conductive stripe, a first memory layer, a first conductive pillar, a first dielectric layer and a first conductive plug. The first conductive strip extends along a first direction. The first memory layer extends along a second direction adjacent to and overlapping with the first conductive stripe to define a first memory area thereon. The first conductive pillar extends along the second direction and overlapping with the first memory area. The first dielectric layer extends along the second direction adjacent to the first conductive stripe, the first memory layer and the first conductive pillar. The first conductive plus extends along the second direction and at least overlaps with a portion of the first conductive stripe, wherein the first conductive plus is electrically insulated from the first conductive stripe, the first memory layer and the first conductive pillar by the first dielectric layer.
