Patent attributes
A semiconductor substrate can include two or more electrodes, located directly or indirectly on the semiconductor substrate, separated from each other and capacitively coupled to the semiconductor substrate. At the two or more electrodes, non-zero frequency time-varying electrical energy can be received. The time-varying electrical energy can be capacitively coupled via the two or more electrodes to trigger a displacement current to activate free carriers confined within the semiconductor substrate to generate heat in the semiconductor substrate. A temperature associated with the semiconductor substrate can be sensed, using a temperature sensor located in association with the semiconductor substrate. A temperature of the semiconductor substrate can be established or adjusted. This can include controlling the electrical energy received at the two or more electrodes using information received from the temperature sensor.
