US Patent 9343871 Facet on a gallium and nitrogen containing laser diode
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Patent abstract
Nonpolar or semipolar laser diode technology incorporating etched facet mirror formation and conventional optical coating layer techniques for reflectivity modification to enable a method for ultra-high catastrophic optical mirror damage thresholds for high power laser diodes are disclosed.
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US Patent 09343871 Facet on a gallium and nitrogen containing laser diode US Patent 9343871 Facet on a gallium and nitrogen containing laser diode
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Patent Number
0934387100
Patent Number
934387100
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Official Website
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Is a
Patent Applicant
Patent Jurisdiction
Patent Number
093438710
Date of Patent
May 17, 2016
0Patent Application Number
138501870
Date Filed
March 25, 2013
0Official Website
Patent Primary Examiner
Edits on 5 Oct, 2022
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Infobox
Is a
Patent Applicant
Patent Jurisdiction
Patent Number
093438710
Date of Patent
May 17, 2016
0Patent Application Number
138501870
Date Filed
March 25, 2013
0Official Website
Patent Primary Examiner
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US Patent 09343871 Facet on a gallium and nitrogen containing laser diode
Infobox
Is a
Patent applicant
Patent jurisdiction
Patent number
09343871
Date of patent
May 17, 2016
Patent application number
13850187
Date Filed
March 25, 2013
Patent primary examiner
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