Is a
Patent attributes
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Anupama Mallikarjunan0
Bing Han0
Daniel P. Spence0
Haripin Chandra0
Manchao Xiao0
Mark Leonard O'Neill0
Steven Gerard Mayorga0
Xinjian Lei0
Date of Patent
May 10, 2016
0Patent Application Number
139023000
Date Filed
May 24, 2013
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H3 group represented by the following Formula I below:
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