US Patent 9324807 Silicon carbide MOSFET with integrated MOS diode
Patent 9324807 was granted and assigned to United Silicon Carbide, Inc. on April, 2016 by the United States Patent and Trademark Office.
Name
# Contributions
Last Contribution
Find more entities like US Patent 9324807 Silicon carbide MOSFET with integrated MOS diode
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
By using this site, you agree to our Terms of Service.