US Patent 9276092 Transistors and methods of forming transistors
Patent 9276092 was granted and assigned to Micron Technology on March, 2016 by the United States Patent and Trademark Office.
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Some embodiments include a transistor having a drain region and a source region. A conductive gate is between the source and drain regions. First channel material is between the gate and the source region. The first channel material is spaced from the gate by one or more insulative materials. Second channel material is between the first channel material and the source region, and directly contacts the source region. The first and second channel materials are transition metal chalcogenide. One of the source and drain regions is a hole reservoir region and the other is an electron reservoir region. Tunnel dielectric material may be between the first and second channel materials.
US Patent 09276092 Transistors and methods of forming transistors US Patent 9276092 Transistors and methods of forming transistors
US Patent 09276092 Transistors and methods of forming transistors
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