Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 12, 2016
Patent Application Number
14172365
Date Filed
February 4, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
A composite spacer structure is formed on vertical sidewalls of a gate structure that is formed straddling a semiconductor fin. In one embodiment, the composite spacer structure includes an inner low-k dielectric material portion and an outer nitride material portion.
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