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US Patent 9230815 Methods for depositing fluorine/carbon-free conformal tungsten

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Patent Citations Received
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US Patent 12068135 Fast gas exchange apparatus, system, and method
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Patent Citations Received
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US Patent 11970776 Atomic layer deposition of metal films
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Patent abstract

Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

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Patent Inventor Names
Atif Noori0
Avgerinos V. Gelatos0
David Thompson0
Mei Chang0
Srinivas Gandikota0
Steve G. Ghanayem0
Xinyu Fu0
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=092308150
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US Patent 09230815 Methods for depositing fluorine/carbon-free conformal tungsten US Patent 9230815 Methods for depositing fluorine/carbon-free conformal tungsten

Infobox
Patent Number
092308150
Patent Number
92308150
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Infobox
Is a
Patent
Patent
0
Patent Applicant
Applied Materials
Applied Materials
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
092308150
Date of Patent
January 5, 2016
0
Patent Application Number
140628040
Date Filed
October 24, 2013
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=092308150
Patent Primary Examiner
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Thanhha Pham
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=09230815
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 US Patent 09230815 Methods for depositing fluorine/carbon-free conformal tungsten

Infobox
Is a
Patent
Patent
Patent applicant
Applied Materials
Applied Materials
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
09230815
Date of patent
January 5, 2016
Patent application number
14062804
Date Filed
October 24, 2013
Patent primary examiner
‌
Thanhha Pham

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