Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 15, 2015
Patent Application Number
13963887
Date Filed
August 9, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method includes growing an epitaxy semiconductor region at a major surface of a wafer. The epitaxy semiconductor region has an upward facing facet facing upwardly and a downward facing facet facing downwardly. The method further includes forming a first metal silicide layer contacting the upward facing facet, and forming a second metal silicide layer contacting the downward facing facet. The first metal silicide layer and the second metal silicide layer comprise different metals.
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