Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chan-Long Shieh0
Juergen Musolf0
Gang Yu0
Fatt Foong0
Date of Patent
June 30, 2015
Patent Application Number
13718183
Date Filed
December 18, 2012
Patent Primary Examiner
Patent abstract
A metal oxide thin film transistor includes a metal oxide semiconductor channel with the metal oxide semiconductor having a conduction band with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band with a second energy level equal to, or less than 0.5 eV above the first energy level.
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