Patent attributes
The invention provides a method for fabricating a light-emitting diode device. The method includes providing a carrier having a first surface and a second surface. The first surface has insulating micro patterns. A buffer layer, a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer are grown on the first surface to form a light-emitting lamination layer. A substrate is provided for the second-type semiconductor layer to bond on. The carrier is lifted off from the light-emitting lamination layer by a laser lift-off process, and surfaces of the insulating micro patterns and a surface of the buffer layer between the insulating micro patterns are exposed. The insulating micro patterns and the buffer layer are removed. Recess structures are formed on the first-type semiconductor layer. A surface-roughing process is then performed on the recess structures.
