The present invention discloses a discrete three-dimensional memory (3D-M). It comprises at least a 3D-array die and at least an integrated intermediate-circuit die comprising both a read/write-voltage generator (VR/VW-generator) and an address/data translator (A/D-translator). The intermediate-circuit die performs voltage, address and/or data conversion between the 3D-M core region and the host. Discrete 3D-M support multiple 3D-array dies.