US Patent 9017629 Intra-cavity gettering of nitrogen in SiC crystal growth
Patent 9017629 was granted and assigned to II-VI Incorporated on April, 2015 by the United States Patent and Trademark Office.
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In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.
US Patent 09017629 Intra-cavity gettering of nitrogen in SiC crystal growth US Patent 9017629 Intra-cavity gettering of nitrogen in SiC crystal growth
US Patent 09017629 Intra-cavity gettering of nitrogen in SiC crystal growth
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