Log in
Enquire now
‌

US Patent 8916914 Field effect transistor having double transition metal dichalcogenide channels

OverviewStructured DataIssuesContributors

Contents

Is a
Patent
Patent

Patent attributes

Patent Applicant
Samsung
Samsung
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
8916914
Date of Patent
December 23, 2014
Patent Application Number
13942831
Date Filed
July 16, 2013
Patent Citations Received
‌
US Patent 11935930 Wrap-around-contact for 2D-channel gate-all-around field-effect-transistors
0
‌
US Patent 12136656 Semiconductor structure having two-dimensional channel
0
Patent Primary Examiner
‌
Michael Lebentritt
No article content yet.

Timeline

No Timeline data yet.

Further Resources

Title
Author
Link
Type
Date
No Further Resources data yet.

References

Find more entities like US Patent 8916914 Field effect transistor having double transition metal dichalcogenide channels

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
Open Query Tool
Access by API
Golden Query Tool
Golden logo

Company

  • Home
  • Press & Media
  • Blog
  • Careers
  • WE'RE HIRING

Products

  • Knowledge Graph
  • Query Tool
  • Data Requests
  • Knowledge Storage
  • API
  • Pricing
  • Enterprise
  • ChatGPT Plugin

Legal

  • Terms of Service
  • Enterprise Terms of Service
  • Privacy Policy

Help

  • Help center
  • API Documentation
  • Contact Us
By using this site, you agree to our Terms of Service.