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US Patent 8847293 Gate structure for semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
March 2, 2012
Date of Patent
September 30, 2014
Patent Application Number
13411304
Patent Citations Received
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US Patent 12027606 Semiconductor devices with air gate spacer and air gate cap
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US Patent 11664268 Dummy fin structures and methods of forming same
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US Patent 11670551 Interface trap charge density reduction
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US Patent 11670635 Semiconductor device and method
0
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US Patent 11670692 Gate-all-around devices having self-aligned capping between channel and backside power rail
0
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US Patent 11688645 Structure and formation method of semiconductor device with fin structures
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US Patent 11695063 Method of forming shaped source/drain epitaxial layers of a semiconductor device
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US Patent 11699758 Isolation structure having different distances to adjacent FinFET devices
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US Patent 11749683 Isolation structure for preventing unintentional merging of epitaxially grown source/drain
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US Patent 11749682 Selective dual silicide formation using a maskless fabrication process flow
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
8847293
Patent Primary Examiner
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William F Kraig

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