Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Josephine B. Chang0
Chung-Hsun Lin0
Jeffrey W. Sleight0
Leland Chang0
Date of Patent
June 3, 2014
Patent Application Number
13944480
Date Filed
July 17, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
A transistor device includes multiple planar layers of channel material connecting a source region and a drain region, where the planar layers are formed in a stack of layers of a channel material; and a gate conductor formed around and between the planar layers of channel material.
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