Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 22, 2014
Patent Application Number
13924741
Date Filed
June 24, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias.
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