US Patent 8698302 Power switching assembly having a robust gate connection

A structurally robust power switching assembly, that has a power transistor, comprising a thin and delicate layer of metal oxide, and a major surface of the layer of metal oxide being substantially coincident with a major surface of the power transistor, the major surface of the power transistor defining both an emitter and a gate. Also, dielectric material is placed over a portion of the emitter, so that it abuts the gate and a highly conductive pillar is constructed out of a relatively soft material, supported by the gate and the dielectric material, so that it has a larger area than would be possible if it was supported only by the gate.