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US Patent 8679923 Method for forming metal gate

Patent 8679923 was granted and assigned to Semiconductor Manufacturing International Corporation on March, 2014 by the United States Patent and Trademark Office.

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Patent
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Current Assignee
Semiconductor Manufacturing International Corporation
Semiconductor Manufacturing International Corporation
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
86799230
Patent Inventor Names
Lily Jiang0
Cindy Li0
Creek Zhu0
Junzhu Cao0
Date of Patent
March 25, 2014
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Patent Application Number
136864830
Date Filed
November 27, 2012
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Patent Primary Examiner
‌
Cheung Lee
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Patent abstract

A method for forming metal gates is provided. In the method, a substrate with a first region and a second region is provided. Dummy gate structures and an ILD layer is formed on the substrate. Dummy gates of the dummy gate structures are removed to form openings respectively within the two regions. Work function layers are respectively formed to overlay the openings. A metal layer is formed on the work function layers and then a CMP process is performed until the ILD layer is exposed, thereby forming the metal gates within the two regions at the same time. Only one CMP process is performed to the metal layer, so that over polishing of the ILD layer may be reduced and thickness of metal gates may be more accurately controlled.

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