The solid-state imaging device comprises a photodetecting section having M×N pixel portions P1,1 to PM,N two-dimensionally arranged in a matrix of M rows and N columns. A pixel portion Pm,n of the photodetecting section includes a photodiode PD generating charge of an amount according to an incident light intensity and a reading-out switch SW1 connected to the photodiode PD. The photodetecting section includes plural dummy photodiodes PD1 arranged around one pixel portion without not completely surrounding the one pixel portion, and each dummy photodiode PD1 is provided in a region surrounded by any two pixel portions adjacent to one another.