US Patent 8495438 Technique for memory imprint reliability improvement

One embodiment of the present invention relates to a method of reducing imprint of a memory cell. The method comprises adding an inversion condition bit operably associated with one or more memory cells storing a memory word. The inversion condition bit indicates whether the memory word represents an actual payload or an inversion of the actual payload. The inversion condition bit and memory word are selectively toggled by a control circuitry. Inversion is performed by reading the inversion condition bit and memory word and rewriting the memory word back to the one or more memory cells in an inverted or non-inverted state, depending on an inversion condition bit. The inversion condition bit is then written to the inversion status bit value. The memory address is incremented, and the inversion status data state is toggled once the address counter addresses the entire memory array. Other methods and circuits are also disclosed.