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US Patent 8437450 Fast measurement of X-ray diffraction from tilted layers

Patent 8437450 was granted and assigned to Jordan Valley Semiconductors on May, 2013 by the United States Patent and Trademark Office.

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Current Assignee
Jordan Valley Semiconductors
Jordan Valley Semiconductors
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
8437450
Date of Patent
May 7, 2013
Patent Application Number
12958420
Date Filed
December 2, 2010
Patent Citations Received
‌
US Patent 11781999 Spot-size control in reflection-based and scatterometry-based X-ray metrology systems
Patent Primary Examiner
‌
Chih-Cheng Glen Kao
Patent abstract

A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having multiple single-crystal layers, including at least a first layer and a second layer that is formed over and tilted relative to the first layer. The X-rays that are diffracted from each of the first and second layers are sensed simultaneously while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including at least a first diffraction peak due to the first layer and a second diffraction peak due to the second layer. The diffraction spectrum is analyzed so as to identify a characteristic of at least the second layer.

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