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US Patent 8414800 Semiconductor nanocrystal composites

Patent 8414800 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on April, 2013 by the United States Patent and Trademark Office.

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Patent
Patent

Patent attributes

Current Assignee
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
8414800
Patent Inventor Names
Shin Ae Jun0
Eun Joo Jang0
Hyo Sook Jang0
Young Hwan Kim0
Date of Patent
April 9, 2013
Patent Application Number
12463056
Date Filed
May 8, 2009
Patent Citations Received
‌
US Patent 11859118 Cadmium-free quantum dots, tunable quantum dots, quantum dot containing polymer, articles, films, and 3D structure containing them and methods of making and using them
0
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US Patent 12116518 Cadmium-free quantum dots, tunable quantum dots, quantum dot containing polymer, articles, films, and 3D structure containing them and methods of making and using them
0
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US Patent 11656231 Passivated nanoparticles
0
Patent Primary Examiner
‌
Mark Eashoo
Patent abstract

A semiconductor nanocrystal composite comprises semiconductor nanocrystals, a matrix material, and a radical scavenger disposed between the semiconductor nanocrystals and the matrix material. A semiconductor nanocrystal composite also comprises a matrix containing semiconductor nanocrystals and a radical scavenger surrounding the matrix. An electronic device also comprises the semiconductor nanocrystal composite.

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