US Patent 8399874 Vertical nonvolatile memory device including a selective diode
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Patent abstract
Provided are a vertical nonvolatile memory device and a method for fabricating the vertical nonvolatile memory device. The vertical nonvolatile memory device can be integrated more highly as compared with a nonvolatile memory device of the related art. In addition, since the vertical nonvolatile memory device includes a selective diode, reading errors can be prevented.
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Patent Inventor Names
Cheol Seong Hwang0
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Patent Citations Received
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US Patent 08399874 Vertical nonvolatile memory device including a selective diode US Patent 8399874 Vertical nonvolatile memory device including a selective diode
Infobox
Patent Number
083998740
Patent Number
83998740
Edits on 24 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
083998740
Date of Patent
March 19, 2013
0Patent Application Number
130080070
Date Filed
January 17, 2011
0Patent Primary Examiner
0
Edits on 16 Dec, 2021
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US Patent 08399874 Vertical nonvolatile memory device including a selective diode
Infobox
Is a
Patent jurisdiction
Patent number
08399874
Date of patent
March 19, 2013
Patent application number
13008007
Date Filed
January 17, 2011
Patent primary examiner
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