Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 19, 2013
Patent Application Number
12957437
Date Filed
December 1, 2010
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
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