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US Patent 8274078 Metal oxynitride semiconductor containing zinc

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US Patent 12125918 Semiconductor device
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US Patent 12119406 Semiconductor device
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US Patent 12080720 Semiconductor device and manufacturing method thereof
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US Patent 12074223 Semiconductor device
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US Patent 11959165 Semiconductor device comprising oxide semiconductor film
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US Patent 11961842 Light-emitting device
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US Patent 11949021 Semiconductor device
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US Patent 11929437 Semiconductor device comprising various thin-film transistors
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US Patent 11923204 Manufacturing method of semiconductor device comprising oxide semiconductor
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US Patent 11837666 Semiconductor device
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US Patent 11791415 Semiconductor device
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US Patent 11776968 Semiconductor device comprising oxide semiconductor layer
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Patent Inventor Names
Masatoshi Watanabe0
Naho Itagaki0
Tatsuya Iwasaki0
Toru Den0
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US Patent 08274078 Metal oxynitride semiconductor containing zinc US Patent 8274078 Metal oxynitride semiconductor containing zinc

Infobox
Patent Number
082740780
Patent Number
82740780
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Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
082740780
Date of Patent
September 25, 2012
0
Patent Application Number
125321850
Date Filed
April 23, 2008
0
Patent Primary Examiner
‌
Jay C Kim
0
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created this topic on 15 Dec, 2021
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 US Patent 08274078 Metal oxynitride semiconductor containing zinc

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
08274078
Date of patent
September 25, 2012
Patent application number
12532185
Date Filed
April 23, 2008
Patent primary examiner
‌
Jay C Kim

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