Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Henry K. Utomo0
Sameer Hemchand Jain0
Cung D. Tran0
Ravikumar Ramachandran0
Date of Patent
August 7, 2012
0Patent Application Number
128932450
Date Filed
September 29, 2010
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A planar silicide structure and method of fabrication is disclosed. A FET having a silicided raised source-drain structure is formed where the height of the source-drain structures are the same as the height of the gates, simplifying the process of forming contacts on the FET. One embodiment utilizes a replacement metal gate FET and another embodiment utilizes a gate-first FET.
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