US Patent 8125038 Nanolaminates of hafnium oxide and zirconium oxide
Patent 8125038 was granted and assigned to Micron Technology on February, 2012 by the United States Patent and Trademark Office.
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Patent abstract
A dielectric film containing a HfO2/ZrO2 nanolaminate and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric layer containing a HfO2/ZrO2 nanolaminate may be realized in a wide variety of electronic devices and systems.
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Patent Inventor Names
Kie Y. Ahn0
Leonard Forbes0
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US Patent 08125038 Nanolaminates of hafnium oxide and zirconium oxide US Patent 8125038 Nanolaminates of hafnium oxide and zirconium oxide
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Patent Number
081250380
Patent Number
81250380
Edits on 22 Apr, 2023
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
081250380
Date of Patent
February 28, 2012
0Patent Application Number
111789140
Date Filed
July 11, 2005
0Patent Primary Examiner
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US Patent 08125038 Nanolaminates of hafnium oxide and zirconium oxide
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
08125038
Date of patent
February 28, 2012
Patent application number
11178914
Date Filed
July 11, 2005
Patent primary examiner
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