Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Akiharu Miyanaga0
Hidekazu Miyairi0
Kengo Akimoto0
Kojiro Shiraishi0
Shunpei Yamazaki0
Date of Patent
November 1, 2011
0Patent Application Number
125357110
Date Filed
August 5, 2009
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
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