Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Naoto Umehara0
Shinichi Kozuka0
Date of Patent
October 4, 2011
Patent Application Number
12139029
Date Filed
June 13, 2008
Patent Citations Received
Patent Primary Examiner
Patent abstract
A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.
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