US Patent 8012846 Isolation structures and methods of fabricating isolation structures
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Patent abstract
A method of forming an isolation structure includes the steps of: (a) forming an opening within a substrate; (b) forming a substantially conformal layer comprising tetraethoxysilane (TEOS) layer along the opening; and (c) forming a dielectric layer over the TEOS layer, the dielectric layer substantially filling the opening.
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Patent Inventor Names
Cheng-Chen Calvin Hsueh0
Cheng-Yuan Tsai0
Chih-Lung Lin0
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US Patent 08012846 Isolation structures and methods of fabricating isolation structures US Patent 8012846 Isolation structures and methods of fabricating isolation structures
Infobox
Patent Number
080128460
Patent Number
80128460
Edits on 28 Mar, 2023
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Infobox
Is a
Patent Jurisdiction
Patent Number
080128460
Date of Patent
September 6, 2011
0Patent Application Number
114625710
Date Filed
August 4, 2006
0Patent Primary Examiner
Edits on 13 Dec, 2021
Golden AI
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Infobox (+7 properties)
US Patent 08012846 Isolation structures and methods of fabricating isolation structures
Infobox
Is a
Patent jurisdiction
Patent number
08012846
Date of patent
September 6, 2011
Patent application number
11462571
Date Filed
August 4, 2006
Patent primary examiner
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