US Patent 8012780 Method of fabricating semiconductor laser

There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InX1Ga1−X1N (0<X1<1) layer on a gallium nitride-based semiconductor region in a reactor; after taking out a substrate product including the InX1Ga1−X1N layer from the reactor, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the InX1Ga1−X1N layer to form a patterned InX1Ga1−X1N layer; and growing an AlX2Ga1−X2N (0≦X2≦1) layer on a top surface of the patterned InX1Ga1−X1N layer to form voids associated with the openings.