Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Masakazu Goto0
Date of Patent
August 30, 2011
0Patent Application Number
123984910
Date Filed
March 5, 2009
0Patent Primary Examiner
Patent abstract
In one aspect of the present invention, a semiconductor device may include a semiconductor substrate; an element isolation region provided in the semiconductor substrate and having an oxide layer and an oxidant-diffusion prevention layer provided on the oxide layer; a gate dielectric film provided on the semiconductor substrate and the oxidant-diffusion prevention layer; and a gate electrode provided on the gate dielectric film.
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