Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
August 23, 2011
Patent Application Number
12405799
Date Filed
March 17, 2009
Patent Citations Received
Patent Primary Examiner
Patent abstract
A memory cell includes a memory element including a MFSFET having a gate insulating film made of a ferroelectric film, and a selection switching element including a MISFET having a gate insulating film made of a paraelectric film. A load element for a read operation is connected in series to the memory cell. The ferroelectric film and the paraelectric film are stacked with a semiconductor film being interposed therebetween. The semiconductor film forms a common channel shared by the MFSFET and the MISFET. The load element includes a MISFET having a channel made of the semiconductor film or a resistance element having a resistor made of the semiconductor film.
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