Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Masahiro Inohara0
Date of Patent
August 9, 2011
0Patent Application Number
124921670
Date Filed
June 26, 2009
0Patent Primary Examiner
Patent abstract
A semiconductor device according to one embodiment includes: a substrate having an element region where a semiconductor element is formed; a via hole formed in a portion of the substrate adjacent to the element region; a conducting portion provided in the via hole via an insulating layer; and a buffer layer provided between the substrate and the insulating layer, wherein the buffer layer is made of a material in which a difference in thermal expansion coefficient between the substrate and the buffer layer is smaller than that between the substrate and the insulating layer.
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