US Patent 7994590 High dielectric constant insulators and associated fabrication methods
Patent 7994590 was granted and assigned to Georgia Tech Research Corporation on August, 2011 by the United States Patent and Trademark Office.
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High-dielectric-constant (k) materials and electrical devices implementing the high-k materials are provided herein. According to some embodiments, an electrical device includes a substrate and a crystalline-oxide-containing composition. The crystalline-oxide-containing composition can be disposed on a surface of the substrate. Within the crystalline-oxide-containing composition, oxide anions can form at least one of a substantially linear orientation or a substantially planar orientation. A plurality of these substantially linear orientations of oxide anions or substantially planar orientations of oxide anions can be oriented substantially perpendicular or substantially normal to the surface of the substrate such that the oxide-containing composition has a dielectric constant greater than about 3.9 in a direction substantially normal to the surface of the substrate. Other embodiments are also claimed and described.
US Patent 07994590 High dielectric constant insulators and associated fabrication methods US Patent 7994590 High dielectric constant insulators and associated fabrication methods
US Patent 07994590 High dielectric constant insulators and associated fabrication methods
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