Patent attributes
A semiconductor device is equipped with a plug conductive layer formed in an interlayer dielectric film on a substrate, and a conductive member provided on the plug conductive layer. The semiconductor device further includes a spacer dielectric film formed on the interlayer dielectric film and having a hole section connecting to the plug conductive layer; and a spacer conductive section embedded in the hole section of the spacer dielectric film, connected to the plug conductive layer and connected to the conducive member, wherein the spacer conductive section is formed from a conductive material having self-orientation characteristic, and a top surface of the spacer dielectric film and a top surface of the spacer conductive section are planarized.
