US Patent 7986555 Method for programming and erasing an NROM cell

Patent 7986555 was granted and assigned to Micron Technology on July, 2011 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Micron Technology

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7986555

Date of Patent

July 26, 2011

Patent Application Number

12622922

Date Filed

November 20, 2009

Patent Primary Examiner

‌

Trong Phan

Patent abstract

A nitride read only memory (NROM) cell can be programmed by applying a ramp voltage to the gate input, a constant voltage to one of the two source/drain regions, and a ground potential to the remaining source/drain region. In order to erase the NROM cell, a constant voltage is coupled to the gate input. A constant positive current is input to one of the source/drain regions. The remaining source/drain region is either allowed to float, is coupled to a ground potential, or is coupled to the first source/drain region.